Defects control for improved electrical properties in(Ba0.8Sr0.2)(Zr0.2Ti0.8)O-3 films by co acceptor doping

Chew, Khian Hooi and Jiang, Y. and Miao, J. (2011) Defects control for improved electrical properties in(Ba0.8Sr0.2)(Zr0.2Ti0.8)O-3 films by co acceptor doping. Applied Physics Letters, 99 (23). ISSN 0003-6951, DOI https://doi.org/10.1063/1.3666021.

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Abstract

(Ba0.8Sr0.2)(Zr0.2Ti0.8)O-3 (BSZT) films were grown on La0.5Sr0.5CoO3 buffered (001) SrTiO3 substrates by pulsed laser deposition. Effects of Co doping on electrical properties of the films were investigated to establish material design through defects control. The doping led to a significant improvement in the electrical properties with reduction in leakage current and dielectric loss. In addition, the dielectric tunability and figure of merit were enhanced, implying that Co-doped BSZT films are promising materials for tunable microware applications. Our detail studies suggest that the improved electrical properties of Co-doped BSZT films are closely related to defect concentrations in the films. (C) 2011 American Institute of Physics. [doi:10.1063/1.3666021]

Item Type:	Article
Funders:	UNSPECIFIED
Additional Information:	Department of Physics, Faculty of Science Building, University of Malaya, 50603 Kuala Lumpur, MALAYSIA
Uncontrolled Keywords:	BA0.96CA0.04TI0.84ZR0.16O3 Thin-Films; Piezoelectric Properties; Dielectric-Constant; Devices
Subjects:	Q Science > QC Physics
Divisions:	Faculty of Science > Department of Physics
Depositing User:	Miss Malisa Diana
Date Deposited:	29 Jul 2013 02:11
Last Modified:	03 Feb 2020 03:32
URI:	http://eprints.um.edu.my/id/eprint/8235

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