Al-Ruqeishi, M.S. and Nor, R.M. and Amin, Y.M. and Al-Azri, K. (2011) Direct growth and Photoluminescence of SiOx nanowires and aligned nanocakes by simple carbothermal evaporation. Silicon, 3 (3). pp. 145-151. ISSN 1876-990X, DOI https://doi.org/10.1007/s12633-011-9091-x.
Full text not available from this repository.Abstract
The growth of SiOx nanowires and nanocakes on an Au-coated n-type-Silicon (100) substrate was achieved via carbothermal evaporation. The effects of the Au layer thickness and the rapid heating rate on the morphology of obtained SiOx nanowires were investigated. A broad emission band from 290 to 600 nm was observed in the photoluminescence (PL) spectrum of these nanowires. There are four PL peaks: one blue emission peak 485 nm (2.56 eV) two green bands centered at 502 nm (2.47 eV) and 524 nm (2.37 eV) for nanocakes and one ultraviolet emission peak at 350 nm (3.54 eV) and a hemisphere curve over the bluish green area taken for SiOx nanowires. These emissions may be related to the various oxygen defects and twofold coordinated silicon lone pair centers.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Nanowires Photoluminescence SiOx nanocakes Blue emission; Broad emission bands Carbothermal evaporation; Direct growth; Green areas Green band Layer thickness Lone pair Oxygen defect Photoluminescence spectrum; Rapid-heating SiOx nanocakes Ultraviolet emission; Evaporation Gold; Phase transitions; Silicon compounds; Silicon oxides |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | miss munirah saadom |
| Date Deposited: | 10 Jul 2013 04:14 |
| Last Modified: | 10 Jul 2013 04:14 |
| URI: | http://eprints.um.edu.my/id/eprint/7856 |
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