Al-Ruqeishi, M.S. and Nor, R.M. and Amin, Y.M. and Al-Azri, K. (2010) Carbon assisted growth and photoluminescence of silicon nanowires fabricated without a catalyst. Silicon, 2 (1). pp. 19-24. ISSN 1876-990X, DOI https://doi.org/10.1007/s12633-009-9024-0.
Full text not available from this repository.Abstract
One-dimensional (1D) silicon nanowires (SiNWs) were fabricated on a catalyst free Si (100) substrate using a thermal evaporation method. Based on a SVLS growth mechanism, the SiNWs obtained were 30-265 nm in diameter and 1.7 mu m to several tens of microns in length. It was found that the presence of graphite powder alone is enough to accomplish the growth. A systematic study of how the growth conditions, such as the Ar carrier gas flow rate, and the growth time effect was performed. The Photoluminescence (PL) of SiNWs was also investigated. The observed broad band is composed of an UV peak or band centered at 350 nm (3.54 eV) and a wide hemisphere curve over the green bluish region (430-550 nm). The theory behind these emissions is discussed.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Si nanowires; SVLS growth mechanism; Thermal evaporation; A-thermal; Broad bands; Carrier gas flow rates; Catalyst-free; Graphite powder; Growth conditions; Growth mechanisms; Growth time; Si nanowire; Silicon Nanowires; Systematic study; Catalysts; Nanowires; Photoluminescence; Silicon |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | miss munirah saadom |
| Date Deposited: | 10 Jul 2013 07:20 |
| Last Modified: | 10 Jul 2013 07:20 |
| URI: | http://eprints.um.edu.my/id/eprint/7835 |
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