Koay, J.Y. and Sharif K., A.M. and Rahman, S.A. (2009) Influence of film thickness on the structural, electrical and photoluminescence properties of vacuum deposited Alq(3) thin films on c-silicon substrate. Thin Solid Films, 517 (17). pp. 5298-5300. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2009.03.145.
Full text not available from this repository.Abstract
In this work. the influence of film thickness on the structural, electrical and photoluminescence (PL) properties of tris (8-hydroxyquinoline) aluminum (Alq(3)) films prepared by vacuum evaporation technique on crystal silicon (c-Si) substrate were studied. Fourier transform infrared (FTIR) spectroscopy. current-voltage (I-V), capacitance-voltage (C-V) and PL spectroscopy measurements were done to investigate these properties. The results demonstrated that the molecular organization of the deposited film was not affected by the film thickness. The PL emission energy and intensity increased with increase in film thickness. The results showed that the turn-on voltage (V-on) and transition voltage (V-T) were also dependent on the film thickness. (C) 2009 Published by Elsevier B.V.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Photoluminescence Current-voltage Capacitance-voltage Transition voltage light-emitting devices transport temperature diodes |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | miss munirah saadom |
| Date Deposited: | 16 Jul 2013 00:44 |
| Last Modified: | 26 Dec 2014 06:15 |
| URI: | http://eprints.um.edu.my/id/eprint/7361 |
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