Ngoi, S.K. and Yap, S.L. and Goh, B.T. and Ritikos, R. and Rahman, S.A. and Wong, C.S. (2012) Formation of nano-crystalline phase in hydrogenated amorphous silicon thin film by plasma focus ion beam irradiation. Journal of Fusion Energy, 31 (1). pp. 96-103. ISSN 0164-0313, DOI https://doi.org/10.1007/s10894-011-9435-y.
Full text not available from this repository.Abstract
A 3.3 kJ Mather type dense plasma focus device is used to generate a pulsed argon ion beam of 100 KeV in this work. Hydrogenated amorphous silicon (a-Si:H) film prepared by plasma enhanced chemical vapor deposition (PECVD) on c-Si substrate was irradiated with the argon ion beam produced by this dense plasma focus device. The effects of exposure to a single, 5 and 10 shots of dense plasma focus argon ion beam irradiation on the surface morphology, crystallinity and chemical bonding properties of the a-Si:H films were studied using Field Emission Scanning Electron Microscope (FESEM), X-ray Diffraction (XRD), Raman scattering and Fourier Transform Infrared (FTIR) spectroscopy, respectively. Formation of nano-crystalline silicon phase along with increase in structural order and hydrogen content in the film structure has been observed when the a-Si:H film was irradiated with a single shot of dense plasma focus argon ion beam. Exposure to 5 and 10 shots of the dense plasma focus argon ion beam irradiation reduced the hydrogen content resulting in a decrease in crystallinity and structural order in the film structure.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Hydrogenated amorphous silicon Silicon nano-crystallites Dense plasma focus Ion beam x-ray-emission neutron emission device deposition implantation |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | miss munirah saadom |
| Date Deposited: | 15 Jul 2013 07:31 |
| Last Modified: | 11 Dec 2014 08:00 |
| URI: | http://eprints.um.edu.my/id/eprint/7354 |
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