Chong, S.K. and Goh, B.T. and Aspanut, Z. and Muhamad, M.R. and Dee, C.F. and Rahman, S.A. (2011) Effect of rf power on the growth of silicon nanowires by hot-wire assisted plasma enhanced chemical vapor deposition (HW-PECVD) technique. Thin Solid Films, 519 (15). pp. 4933-4939. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2011.01.056.
Full text not available from this repository.Abstract
Silicon nanowires (SiNWs) were synthesized by simultaneous evaporation of Au and Si deposition using H(2) diluted SiH(4). The deposition techniques combined hot-wire (HW) and plasma enhanced chemical vapor deposition (PECVD). Au wires were placed on the filament and heated simultaneously with the activation of the rf plasma for the dissociation of SiH4 and H2 gases. Five set of samples were deposited on ITO-coated glass substrate at different rf power varied from 20 to 100W in an interval of 20W, keeping other deposition parameters constant. High yield of SiNWs with diameter ranging from 60 to 400 nm and length about 10 mu m were grown at rf power of 80W (power density -1018 mW cm(-2)). Rf power of 100W (power density -1273 mW cm(-2)) suppressed the growth of these SiNWs. The growth mechanisms of SiNWs are tentatively proposed. The nanocrystalline structure of SiNWs is confirmed by Raman spectra and HRTEM measurement. (C) 2011 Elsevier B.V. All rights reserved.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Silicon nanowires HW-PECVD rf power Raman HRTEM low-temperature implantation arrays indium films |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | miss munirah saadom |
| Date Deposited: | 15 Jul 2013 07:12 |
| Last Modified: | 21 Dec 2014 08:49 |
| URI: | http://eprints.um.edu.my/id/eprint/7338 |
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