Goh, Boon Tong and Ngoi, Siew Kien and Yap, S.L. and Wong, C.S. and Rahman, Saadah Abdul (2013) Effect of energetic ion beam irradiation on structural and optical properties of a-Si:H thin films. Thin Solid Films, 529. pp. 159-163. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2012.07.072.
Full text not available from this repository.Abstract
Hydrogenated amorphous silicon (a-Si:H) thin films deposited by radio-frequency plasma enhanced chemical vapor deposition were irradiated by an energetic argon ion beam source from a 3.3 kJ Mather type dense plasma focus device. The effect of the energetic ion beam irradiation on the structural and optical properties of a-Si:H thin films has been studied. The results show that irradiation of the energetic ion beam leads to the formation of Si nano-crystallites embedded within the amorphous matrix. This significantly improves the optical properties of the films, which include widening of the optical band gap and exhibiting wide range of photoluminescence (PL) emission spectra at room temperature. The correlations of the PL peak energy and intensity with the optical energy gap and crystalline volume fraction in the variation of number of shots are discussed.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Dense plasma focus Energetic ion beam irradiation a-Si:H Si nano-crystallites |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | miss munirah saadom |
| Date Deposited: | 15 Jul 2013 05:03 |
| Last Modified: | 12 Dec 2014 02:12 |
| URI: | http://eprints.um.edu.my/id/eprint/7333 |
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