Tarek, Ahmad Hafiz Jafarul and Onik, Tahsin Ahmed Mozaffor and Lai, Chin Wei and Abd Razak, Bushroa and Lee, Hing Wah and Tan, Chee Keong and Azeem, Waqar and Wong, Yew Hoong (2024) Bilayer gate dielectric of ZrO2 and Ho2O3 on 4H-SiC substrate: structural and electrical characterization. Journal of Materials Science: Materials in Electronics, 35 (34). p. 2151. ISSN 0957-4522, DOI https://doi.org/10.1007/s10854-024-13919-0.
Full text not available from this repository.Abstract
This study focuses on the performance evaluation of the structural and electrical characterization with various gas concentrations of bilayer oxide gate dielectric ZrO2 and Ho2O3 thin films on a 4H-SiC substrate. The structural characterization of XRD, FTIR, and XPS indicated the formation of Zr-O, Ho-O, Zr-O-Si, and Ho-O-Si bonds. The cross sections of oxide layers were examined through a high-resolution transmission electron microscope with a physical thickness of 4.77 to 5.53 nm. The absence of interfacial layers has been reasoned due to nitrogen atoms affect causing blockage of charge movement and oxygen diffusion between oxide layers and 4H-SiC substrate. It was observed that the ZrO2/Ho2O3/SiC sample underwent oxidation with a gas concentration ratio of 90% O-2:10% N-2 has the highest energy band alignment of conduction band offset Delta E-v similar to 3.18 eV and valence band offset Delta E-c similar to 5.38 eV with highest electrical hard breakdown field of 9.7 MVcm(-1). The effective dielectric constant (k(eff)) similar to 33.54, effective oxide charge (Q(eff)), average interface trap density (D-it), and slow-trap density have been obtained from the derivation of capacitance-voltage plot. The analysis supports the conclusion that the bilayer thin film oxidized with a gas concentration ratio of 90% O-2:10% N-2 produced the optimal electrical performance. This may serve as a high-k gate dielectric application in metal-oxide-semiconductor-based devices.
| Item Type: | Article |
|---|---|
| Funders: | Ministry of Education, Malaysia (FRGS/1/2022/TK09/UM/02/33), Ministry of Higher Education (MOHE) Malaysia via Fundamental Research Grant Scheme (IIRG018B-2019), Universiti Malaya via the Impact-Oriented Interdisciplinary Research Grant (IIRG) Program |
| Subjects: | Q Science > QC Physics T Technology > TJ Mechanical engineering and machinery T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Engineering > Department of Mechanical Engineering Deputy Vice Chancellor (Research & Innovation) Office > Nanotechnology & Catalysis Research Centre |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 24 Feb 2025 02:36 |
| Last Modified: | 24 Feb 2025 02:36 |
| URI: | http://eprints.um.edu.my/id/eprint/47272 |
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