Hisyam, Muhammad Iznul and Shuhaimi, Ahmad and Norhaniza, Rizuan and Mansor, Marwan and Williams, Adam and Hussin, Mohd Rofei Mat (2024) Study of AlN Epitaxial Growth on Si (111) Substrate Using Pulsed Metal-Organic Chemical Vapour Deposition. Crystals, 14 (4). p. 371. ISSN 2073-4352, DOI https://doi.org/10.3390/cryst14040371.
Full text not available from this repository.Abstract
A dense and smooth aluminium nitride thin film grown on a silicon (111) substrates using pulsed metal-organic chemical vapor deposition is presented. The influence of the pulsed cycle numbers on the surface morphology and crystalline quality of the aluminium nitride films are discussed in detail. It was found that 70 cycle numbers produced the most optimized aluminium nitride films. Field emission scanning electron microscopy and atomic force microscopy images show a dense and smooth morphology with a root-mean-square-roughness of 2.13 nm. The narrowest FWHM of the X-ray rocking curve for the AlN 0002 and 10-12 reflections are 2756 arcsec and 3450 arcsec, respectively. Furthermore, reciprocal space mapping reveals an in-plane tensile strain of 0.28%, which was induced by the heteroepitaxial growth on the silicon (111) substrate. This work provides an alternative approach to grow aluminium nitride for possible application in optoelectronic and power devices.
| Item Type: | Article |
|---|---|
| Funders: | Ministry of Energy, Science, Technology, Environment and Climate Change (MESTECC), Malaysia |
| Uncontrolled Keywords: | aluminium nitride; MOCVD; pulsed metal-organic chemical vapour deposition; silicon (111) substrate; in-plane tensile strain |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 14 Oct 2024 08:55 |
| Last Modified: | 14 Oct 2024 08:55 |
| URI: | http://eprints.um.edu.my/id/eprint/45360 |
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