Liu, Yunpeng and Ibrahim, Suriani and Majid, Nazia Abdul and Mohd Sabri, Mohd Faizul and Sun, Jianwen and Zhuo, Qiming and Liu, Wei (2024) Adaptive impedance matching in microwave and terahertz metamaterial absorbers using PIN diodes and GaN HEMTs. Journal of Physics D: Applied Physics, 57 (31). p. 315101. ISSN 0022-3727, DOI https://doi.org/10.1088/1361-6463/ad4565.
Full text not available from this repository.Abstract
Metamaterial absorbers allow electromagnetic waves to be converted into heat energy based on impedance matching. However, passive metamaterial absorbers exhibit fixed absorption characteristics, limiting their flexibility. This work demonstrates tunable microwave and terahertz absorbers by integrating adjustable resistors into the metamaterial units. First, a microwave absorber from 1 to 5 GHz was designed by embedding PIN diodes with voltage-controlled resistance. Calculations, simulations, and measurements verified two separate absorption peaks over 90% when optimized to a resistance of 250 Omega. The absorption frequencies shifted based on the resistor tuning. Building on this, a terahertz absorber was modeled by substituting gallium nitride high electron mobility transistors (GaN HEMTs) as the adjustable resistor component. The GaN HEMTs were controlled by an integrated gate electrode to modify the two-dimensional electron gas density, allowing resistance changes without external voltage terminals. Simulations revealed two absorption peaks exceeding 90% absorption at 0.34 THz and 1.06 THz by adjusting the equivalent resistance from 180 Omega to 380 Omega, and the tunable resistance is verified by DC measurement of single GaN HEMT in the unit. This work demonstrates how integrating adjustable resistors enables dynamic control over the absorption frequencies and bandwidths of metamaterial absorbers. The proposed geometries provide blueprints for tunable microwave and terahertz absorbers.
| Item Type: | Article |
|---|---|
| Funders: | UM International Collaboration Grant (SATU) |
| Uncontrolled Keywords: | PIN diode; absorber; metamaterial; microwave; terahertz; GaN HEMT |
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Engineering > Department of Mechanical Engineering Faculty of Science > Institute of Biological Sciences |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 17 Sep 2024 03:04 |
| Last Modified: | 17 Sep 2024 03:04 |
| URI: | http://eprints.um.edu.my/id/eprint/45104 |
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