Ghafari, Shadi and Kazemzad, Mahmood and Naderi, Nima and Eshraghi, Mohamad Javad (2024) Performance Improvement of Photodetectors Based on ZIF-8 Nanostructures on Porous Silicon Substrate. Journal of Electronic Materials, 53 (3). pp. 1577-1589. ISSN 0361-5235, DOI https://doi.org/10.1007/s11664-023-10892-y.
Full text not available from this repository.Abstract
Metal–organic frameworks (MOFs) have been widely used in optical devices due to their specific optoelectronic properties and compatibility with various substrates. Zeolitic imidazolate frameworks (ZIFs) are a subclass of MOFs with interesting optical and electrical properties. Specifically, ZIF-8 on a porous silicon (PS) substrate shows high mobility and improved charge transfer ability at low temperatures. In this research, significant improvement was obtained in detectivity, sensitivity, and noise equivalent power of fabricated photodetectors based on ZIF-8 nanostructures. According to the current–voltage curves, ZIF-8/PS samples required lower bias voltage in comparison with ZIF-8/Si for offering the same current. Therefore, the photodetectors based on ZIF-8/PS were low-power devices with many industrial applications. The morphology of nanostructures showed the deposition of more homogeneous and compact ZIF-8 layers on PS compared with the samples based on a non-porous silicon substrate, indicating the beneficial seeding effect of the porous substrate. According to the structural analysis, the polycrystalline ZIF-8 with dominant orientation of (011) was successfully grown on the PS (100) substrate. The higher photoluminescence intensity was recorded for the ZIF-8/PS sample due to its higher electron–hole coupling and surface-to-volume ratio. In order to study the optoelectronic properties of nanostructures, ZIF-8-based photodetectors were prepared and were exposed to various excitation wavelengths. The results indicated the temperature dependence of photocurrent. The photodetectors based on ZIF-8/PS nanostructures showed lower NEP, higher photoresponsivity, and better specific detectivity (D *) of 10.5 × 1013 cm Hz1/2 W−1 upon exposure to the incident illumination (λ = 365 nm) at 250 K. Graphical Abstract: Figure not available: see fulltext.. © 2024, The Minerals, Metals & Materials Society.
| Item Type: | Article |
|---|---|
| Funders: | Materials & Energy Research Center (MERC) |
| Additional Information: | Cited by: 0 |
| Uncontrolled Keywords: | Charge transfer; Deposition; Electrochemical etching; Morphology; Nanostructures; Photodetectors; Photons; Substrates; Temperature distribution; Metalorganic frameworks (MOFs); Optoelectronics property; Porous silicon substrates; Silicon samples; Solvothermal; Solvothermal deposition; Temperature dependent; Temperature-dependent photosensitivity; Zeolitic imidazolate framework-8; Zeolitic imidazolate frameworks; Porous silicon |
| Subjects: | Q Science > QC Physics T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Deputy Vice Chancellor (Research & Innovation) Office > Photonics Research Centre |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 15 Nov 2024 07:39 |
| Last Modified: | 15 Nov 2024 07:39 |
| URI: | http://eprints.um.edu.my/id/eprint/44758 |
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