Yong, Jack Kee and Ramiah, Harikrishnan and Churchill, Kishore Kumar Pakkirisami and Chong, Gabriel and Mekhilef, Saad and Chen, Yong and Mak, Pui-In and Martins, Rui P. (2022) A 0.1-V V-IN subthreshold 3-stage dual-branch charge pump with 43.4% peak power conversion efficiency using advanced dynamic gate-bias. IEEE Transactions on Circuits and Systems II-Express Briefs, 69 (9). pp. 3929-3933. ISSN 1549-7747, DOI https://doi.org/10.1109/TCSII.2022.3182344.
Full text not available from this repository.Abstract
This brief proposes a 3-stage dual-branch charge pump (CP) with an advanced dynamic gate-biasing technique (DGB) enabling ultra-low-voltage (0.1 V) energy harvesting. Specifically, we reduce the forward conduction loss and the reverse current leakage loss with the combination of an advanced DGB and an NMOS-PMOS dual-switch transistor pair. Also, we investigate the relationship between the pumping capacitance and the power conversion efficiency (PCE) of the CP, thus guiding the PCE improvement with minimal capacitance. The prototype fabricated in 65-nm CMOS achieves a 43.4% PCE at a 0.1-V input voltage.
| Item Type: | Article |
|---|---|
| Funders: | Collaborative Research in Engineering, Science and Technology Center (CREST) Program [T05C2-19(PV026-2020)] |
| Uncontrolled Keywords: | Logic gates; Switches; Control systems; Transistors; Voltage; Voltage control; Switching circuits; Cross-coupled charge pump (CCCP); CMOS; Energy harvesting (EH); Power conversion efficiency (PCE) |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Engineering |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 19 Sep 2023 03:24 |
| Last Modified: | 19 Sep 2023 03:24 |
| URI: | http://eprints.um.edu.my/id/eprint/41330 |
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