Gan, Soon Xin and Bin Ng, Kok and Chew, Jing Wen and Tey, Lian Seng and Chong, Wen Sin and Chong, Wu Yi and Goh, Boon Tong and Lai, Choon Kong and Madden, Steve and Choi, Duk-Yong and Ahmad, Harith (2022) Graphene oxide enhanced phase change tolerance of Ge2Sb2Se4Te1 for all-optical multilevel non-volatile photonics memory. Journal of the Optical Society of America B-Optical Physics, 39 (11). ISSN 0740-3224, DOI https://doi.org/10.1364/JOSAB.471940.
Full text not available from this repository.Abstract
The low optical loss of Ge2Sb2Se4Te1 (GSST) makes it a potential functional material for all-optical multilevel photonics memory devices that can operate in the optical telecommunication wavelength band. However, the same characteristic also restricted the tolerance of GSST phase change conditions using 1550 nm as an excitation light source. This work reports on the enhancement of GSST phase change condition tolerance using a graphene oxide (GO) intermediate layer on a polymer waveguide platform. The hybrid waveguide exhibits an insertion loss of around 1 dB and a maximum readout contrast of 25% between amorphous and crystalline states, with a step increase in readout contrast of around 5% per step. This work serves as a proof of concept for the imple-mentation of a GSST-GO hybrid structure as an optical functional material in all-optical photonics memory applications.(c) 2022 Optica Publishing Group
| Item Type: | Article |
|---|---|
| Funders: | Ministry of Education, Malaysia (Grant No: FRGS/1/2019/STG02/UM/02/3), University Research Fund (Grant No: RU002-2020) |
| Uncontrolled Keywords: | Optics; Photonics |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics Deputy Vice Chancellor (Research & Innovation) Office > Photonics Research Centre |
| Depositing User: | Ms Zaharah Ramly |
| Date Deposited: | 28 Nov 2023 08:27 |
| Last Modified: | 28 Nov 2023 08:27 |
| URI: | http://eprints.um.edu.my/id/eprint/39360 |
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