Abd Rahman, Mohd Nazri and Yusuf, Yusnizam and Anuar, Afiq and Mahat, Mohamad Raqif and Chanlek, Narong and Talik, Noor Azrina and Abdul Khudus, Muhammad Imran Mustafa and Zainal, Norzaini and Abd Majid, Wan Haliza and Shuhaimi, Ahmad (2020) Agglomeration enhancement of AlN surface diffusion fluxes on a (0001)-sapphire substrate grown by pulsed atomic-layer epitaxy techniques via MOCVD. CrystEngComm, 22 (19). pp. 3309-3321. ISSN 1466-8033, DOI https://doi.org/10.1039/d0ce00113a.
Full text not available from this repository.Abstract
An atomically flat covering with a dense and crack-free surface of aluminium nitride films was successfully deposited on a sapphire-(0 0 0 1) substrate through a pulsed atomic-layer epitaxy technique via horizontal metalorganic chemical vapour deposition. The distribution of surface diffusion energy for the as-deposited pulsed atomic-layer epitaxy aluminium nitride films was examined by integrating the growth temperature at 1120 degrees C, 1150 degrees C and 1180 degrees C, respectively. The micrograph from field emission scanning electron microscopy and atomic force microscopy topography analyses disclosed a dense and crack-free surface with near atomically flat aluminium nitride films was obtained at 1180 degrees C with the smallest root mean square surface roughness of 0.98 nm. The progression of the E-2 (high) peak frequency retrieved from the Raman spectra was analysed to understand the in-plane compressive strain generated within the as-deposited aluminium nitride films. The lowest screw and mixed-edge threading dislocation densities were calculated to be 2.06 x 10(7) and 7.33 x 10(9) cm(-2), respectively, implying an enhancement in the kinetic mobility of the AlN surface diffusion fluxes when deposited at 1180 degrees C. The photoluminescence and X-ray photoemission scan spectra also presented a low inclusion of foreign impurities on the surface of the aluminium nitride film.
| Item Type: | Article |
|---|---|
| Funders: | OSRAM Opto Semiconductor SDN BHD, Ministry of Higher Education (MOHE) Long Term Research Grant Scheme (LRGS) LR001A-2016A PV015-2015 |
| Uncontrolled Keywords: | C-Plane Sapphire; High-Quality Aln; Aluminum Nitride; Structural-Properties; Gan Films; Temperature; Deposition; Defect; Luminescence; Templates; |
| Subjects: | Q Science > QD Chemistry |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | Ms Zaharah Ramly |
| Date Deposited: | 24 Jun 2024 06:34 |
| Last Modified: | 24 Jun 2024 06:34 |
| URI: | http://eprints.um.edu.my/id/eprint/36683 |
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