Yeoh, Keat Hoe and Chew, Khian-Hooi and Yoon, Tiem Leong and Ong, Duu Sheng and Rusi, - (2021) Electronics and magnetic properties of p-block elements doped 2D buckled gallium nitride MGaN (M = Al, Si, P and S): A first-principles study. In: 4th International Sciences, Technology and Engineering Conference: Exploring Materials for the Future, ISTEC 2020, 8 October 2020, Arau, Virtual.
Full text not available from this repository.Abstract
Ab initio calculations within the density-functional theory (DFT) are carried out to investigate the electronics and magnetic properties of the p-block elements doped two-dimensional GaN (2D GaN). We have selected Al, Si, P and S dopants as the representative for Group III, IV, V and VI elements, respectively. Depending on the type of dopant and substitution site, the semiconducting characteristic of the 2D GaN can be changed into metallic. Similarly, magnetism can be induced on the 2D GaN with the total magnetization varied from 0.5 mu B to 1.46 mu B.
| Item Type: | Conference or Workshop Item (Paper) |
|---|---|
| Funders: | University of Southern Maine, Universiti Malaya, Ministry of Higher Education, Malaysia [Grant No: FRGS/1/2017/STG07/UTAR/02/2] |
| Additional Information: | 4th International Sciences, Technology and Engineering Conference (ISTEC) - Exploring Materials for the Future, ELECTR NETWORK, OCT 08, 2020 |
| Uncontrolled Keywords: | Electronics; Gallium Nitride; Magnetism; Density-functional theory (DFT) |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | Ms Zaharah Ramly |
| Date Deposited: | 12 Oct 2023 10:19 |
| Last Modified: | 12 Oct 2023 10:19 |
| URI: | http://eprints.um.edu.my/id/eprint/35425 |
Actions (login required)
 |
View Item |
