Effects of pressure and substrate temperature on the growth of Al-doped ZnO films by pulsed laser deposition

Kek, Reeson and Tan, Kwan Chu and Nee, Chen Hon and Yap, Seong Ling and Koh, Song Foo and Arof, Abdul Kariem and Tou, Teck Yong and Yap, Seong Shan (2020) Effects of pressure and substrate temperature on the growth of Al-doped ZnO films by pulsed laser deposition. Materials Research Express, 7 (1). 016414. ISSN 2053-1591, DOI https://doi.org/10.1088/2053-1591/ab62f8.

Full text not available from this repository.
Official URL: https://doi.org/10.1088/2053-1591/ab62f8

Abstract

Al-doped ZnO (AZO) thin films were deposited on p-Si (100) by pulsed laser deposition from a composite ceramic target (ZnO:Al2O3) by using 355 nm laser at different O2 background pressure and substrate temperature. Upon ablation at laser fluence of 2 Jcm-2, plasma plume consists of Zn neutrals and ions, Al neutrals and O neutral are formed. As the O2 background pressure increases from 3 Pa to 26 Pa, the energy of the plasma species are moderated. The results show that the ions density and velocity reduced significantly above 13 Pa. The velocity of the ions reduced from 14 kms-1 to 11 kms-1 at 13 Pa, while the ions energy reduced from 63 eV to 42 eV respectively. Below 13 Pa, crystalline and homogeneous AZO nanostructured films were formed. Above 13 Pa, the process results in low crystallinity films with higher porosity. The resistivity of the films also increases from 0.1 ohmcm to 24 ohmcm as the pressure increased. At fixed O2 background pressure of 3 Pa, the adatom mobility of atoms on the substrates is altered by substrate heating. The resistivity of the films decreased to 10-3 ohmcm when the substrates are heated to 100 °C-300 °C during deposition. The films with highest carrier density of 1020 cm-3 and carrier mobility of 13 cmV-1 s-1 are achieved at 200 °C. © 2020 The Author(s). Published by IOP Publishing Ltd.

Item Type: Article
Funders: UNSPECIFIED
Uncontrolled Keywords: Al-doped ZnO (AZO); laser produced plasma; O2 pressure; pulsed laser deposition (PLD); substrate temperature
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Department of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 23 Apr 2020 11:07
Last Modified: 23 Apr 2020 11:07
URI: http://eprints.um.edu.my/id/eprint/24216

Actions (login required)

View Item View Item