Rahman, Mohd Nazri Abd and Sulaiman, Abdullah Fadil and Abdul Khudus, Muhammad Imran Mustafa and Allif, Kamarul and Talik, Noor Azrina and Basri, Siti Hajar and Shuhaimi, Ahmad (2019) Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition. Japanese Journal of Applied Physics, 58 (SC). SC1037. ISSN 0021-4922, DOI https://doi.org/10.7567/1347-4065/ab09d3.
Full text not available from this repository.Abstract
The effect of different numbers of Al and N2 pulse cycles on the quality of AlN films prepared via the pulsed atomic-layer epitaxy (PALE) technique and epitaxially deposited on a c-plane sapphire substrate by metal organic chemical vapor deposition were investigated. The characteristics of AlN/sapphire were studied by atomic force microscopy, field emission scanning electron microscopy and Raman spectroscopy. AlN film deposited with the PALE technique with the highest number of pulse cycles (1050) was observed to exhibit highly uniform spherical AlN grains and a dense film surface with a root mean square roughness of 0.46 nm. Transition of the E2 (high) peak from the Raman spectrum shows that the strain compression in PALE AlN films is inversely proportional to the number of pulse cycles. © 2019 The Japan Society of Applied Physics.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Aluminum nitride; Atomic force microscopy; Field emission microscopes; III-V semiconductors; Industrial chemicals; Organic chemicals; Organometallics; Sapphire; Scanning electron microscopy |
| Subjects: | Q Science > Q Science (General) Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 06 Feb 2020 03:57 |
| Last Modified: | 06 Feb 2020 03:57 |
| URI: | http://eprints.um.edu.my/id/eprint/23703 |
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