Al-Azzawi, Alabbas A. and Almukhtar, Aya A. and Reddy, Pinninty Harshavardhan and Dutta, Debjit and Das, Shyamal and Dhar, Anirban and Paul, Mukul Chandra and Zakaria, U.N. and Harun, Sulaiman Wadi (2018) A Flat-Gain Double-Pass Amplifier with New Hafnia-Bismuth-Erbium Codoped Fiber. Chinese Physics Letters, 35 (5). 054206. ISSN 0256-307X, DOI https://doi.org/10.1088/0256-307X/35/5/054206.
Full text not available from this repository.Abstract
An efficient and compact double-pass optical fiber amplifier is demonstrated using a newly developed hafnia bismuth erbium co-doped fiber (HBEDF) as a gain medium. The HBEDF is fabricated using a modified chemical vapor deposition in conjunction with solution doping. The fiber has an erbium ion concentration of 12500 ppm. At the optimum length of 0.5 m, the HBEDF amplifier (HBEDFA) achieves a flat gain of 26 dB with a gain variation of less than 1.5 dB within a wavelength region from 1530 to 1560nm when the input signal and pump power are fixed at -30dBm and 140mW, respectively. On the other hand, at the input signal power of -10 dBm, the HBEDFA also achieves a flat gain of 14.2 dB with a gain variation of less than 2.5 dB within a wide wavelength region from 1525 to 1570 nm. Compared with the conventional zirconia erbium co-doped fiber based amplifier, the proposed HBEDFA obtains a more efficient gain and lower noise figure. For an input signal of -30 dBm, the gain improvements of 6.2 dB and 4.8 dB are obtained at 1525nm and 1540 nm, respectively.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Erbium doped fiber amplifiers; Fiber amplifiers; Amplifier EDFA |
| Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
| Divisions: | Faculty of Engineering |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 26 Sep 2019 06:58 |
| Last Modified: | 26 Sep 2019 06:59 |
| URI: | http://eprints.um.edu.my/id/eprint/22586 |
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