Kek, Reeson and Nee, Chen Hon and Yap, Seong Ling and Tou, Teck Yong and Arof, Abdul Kariem and Koh, Song Foo and Yap, Seong Shan (2018) UV and visible photodetection of Al-doped ZnO on p-Si prepared by pulsed laser deposition. Materials Research Express, 5 (11). p. 116201. ISSN 2053-1591, DOI https://doi.org/10.1088/2053-1591/aadb19.
Full text not available from this repository.Abstract
Al-doped ZnO (AZO) thin films were deposited on p-Si (100) by pulsed laser deposition at room temperature to form AZO/p-Si heterojunctions. Crystalline films with different properties were obtained. The heterojunctions exhibit diode behavior in dark and responded to illumination of broadband visible (400 nm ∼ 750 nm) and/or ultraviolet (368 nm) light in applied voltage range of only ±1 V. Visible photons are mostly absorbed in p-Si and UV photons were absorbed in AZO layer. However, the defects level within the bandgap of the AZO layer would also contribute to photocurrent under visible light illumination. The best photodetection was obtained for AZO with resistivity of 1 Ωcm and low defects density where the sample response to either UV or visible light by changing the biasing voltage from -1 V or +1 V.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | aluminum-doped zinc oxide; current- voltage characteristics; heterojunction; pulsed laser deposition; UVphotodetection; visible photodetection |
| Subjects: | Q Science > Q Science (General) Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 18 Jul 2019 08:59 |
| Last Modified: | 18 Jul 2019 08:59 |
| URI: | http://eprints.um.edu.my/id/eprint/21656 |
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