Yaghoubi, Alireza and Masenelli-Varlot, Karine and Boisron, Olivier and Ramesh, Singh and Melinon, Patrice (2018) Is Graphitic Silicon Carbide (Silagraphene) Stable? Chemistry of Materials, 30 (20). pp. 7234-7244. ISSN 0897-4756, DOI https://doi.org/10.1021/acs.chemmater.8b03293.
Full text not available from this repository.Abstract
Graphene is considered to be the most likely candidate for the postsilicon era; however, the problem with its zero band gap is challenging to overcome. A close relative of silicon, silicon carbide is expected to have a stable 2D polymorph which happens to be a wide-gap semiconductor. Unfortunately, the so-called silagraphene has proven to be elusive. To date, neither theoretical nor experimental studies have been conclusive. Here, we employ computational methods to determine the stable arrangements of silagraphene and establish their accurate band structure. We also experimentally validate our models by preparing and characterizing a number of graphitic features. Silagraphene exhibits a wide spectrum of optoelectronic properties (360-690 nm) as well as an unusual band structure with highly anisotropic transport properties, which originates from its nondispersive band near its K-point. This feature makes direct-indirect gap crossover extremely sensitive to ambient conditions, making silagraphene suitable for a range of sensors.
| Item Type: | Article |
|---|---|
| Funders: | HIR program at University of Malaya (UM.C/ 625/1/HIR/MOHE/CHAN/09), CNRS within the framework of LABEX iMUST, Université de Lyon (ANR-10-LABX-0064/ANR-11-IDEX-0007) |
| Uncontrolled Keywords: | Energy gap; Silicon carbide |
| Subjects: | T Technology > TJ Mechanical engineering and machinery |
| Divisions: | Faculty of Engineering |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 15 Feb 2019 08:19 |
| Last Modified: | 15 Feb 2019 08:19 |
| URI: | http://eprints.um.edu.my/id/eprint/20335 |
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