Azimah, E. and Zainal, N. and Hassan, Z. and Shuhaimi, A. and Bahrin, A. (2013) Electrical and optical characterization of Mg doping in GaN. Advanced Materials Research, 620. pp. 453-457. DOI https://doi.org/10.4028/www.scientific.net/AMR.620.453.
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Abstract
Apossible evidence of Mg related emission in Mg doped GaN material is observed inoptical measurement, even without thermal annealing. Meanwhile, the electrical properties of the sample improve when Ni/Au contact layer was annealed up to 400°C, but degrade at further temperature. We propose that such behavior isrelated to degradation of surface morphology of metal contact at higher temperature.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Mg doped GaN; PL; I-V; Annealing temperature |
| Subjects: | Q Science > QC Physics T Technology > T Technology (General) |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | Ms. Norhamizah Tamizi |
| Date Deposited: | 28 Apr 2014 02:20 |
| Last Modified: | 28 Apr 2014 02:20 |
| URI: | http://eprints.um.edu.my/id/eprint/9783 |
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