Compositional and structural characterization of Heterostructure InGaN-based light-emitting diode by high resolution x-ray diffraction

Ali, A.H. and Shuhaimi, A. and Hassan, Z. and Yusoff, Y. (2013) Compositional and structural characterization of Heterostructure InGaN-based light-emitting diode by high resolution x-ray diffraction. Advanced Materials Research, 620. pp. 22-27.

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Abstract

This paper focuses on the compositional and structural characterization of InGaN-based light-emitting diode (LED) using high resolution x-ray diffraction (HRXRD) system. The LED was epitaxially grown on Si (111) substrate that comprises of In0.11Ga0.89N multi-quantum-well (MQW) active layer. Phase analysis 2θ-scan proved the composition of GaN (0002) and (0004) at 34.63o and 72.98o,respectively. Rocking curve φ-scan showed six significant peaks of the hexagonal GaN structures with consistent angular gaps of ~60o. From x-ray rocking curve (XRC) ω-scan, screw and mix dislocation density is found as 2.85 × 109 cm-2, while pure edge dislocation density is found as 2.23 × 1011 cm-2.

Item Type: Article
Uncontrolled Keywords: InGaN; Light-emitting diode; X-ray diffraction; Multi-quantum-well.
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Divisions: Faculty of Science > Dept of Physics
Depositing User: Ms. Norhamizah Tamizi
Date Deposited: 28 Apr 2014 02:17
Last Modified: 28 Apr 2014 02:17
URI: http://eprints.um.edu.my/id/eprint/9782

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