Influence of film thickness on the structural, electrical and photoluminescence properties of vacuum deposited Alq(3) thin films on c-silicon substrate

Koay, J.Y.; Sharif K., A.M.; Rahman, S.A. (2009) Influence of film thickness on the structural, electrical and photoluminescence properties of vacuum deposited Alq(3) thin films on c-silicon substrate. Thin Solid Films, 517 (17). pp. 5298-5300. ISSN 0040-6090

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Abstract

In this work. the influence of film thickness on the structural, electrical and photoluminescence (PL) properties of tris (8-hydroxyquinoline) aluminum (Alq(3)) films prepared by vacuum evaporation technique on crystal silicon (c-Si) substrate were studied. Fourier transform infrared (FTIR) spectroscopy. current-voltage (I-V), capacitance-voltage (C-V) and PL spectroscopy measurements were done to investigate these properties. The results demonstrated that the molecular organization of the deposited film was not affected by the film thickness. The PL emission energy and intensity increased with increase in film thickness. The results showed that the turn-on voltage (V-on) and transition voltage (V-T) were also dependent on the film thickness. (C) 2009 Published by Elsevier B.V.

Item Type: Article
Creators:
  1. Koay, J.Y.
  2. Sharif K., A.M.
  3. Rahman, S.A.(Department of Physics, Faculty of Science Building, University of Malaya, 50603 Kuala Lumpur, MALAYSIA)
Journal or Publication Title: Thin Solid Films
Uncontrolled Keywords: Photoluminescence Current-voltage Capacitance-voltage Transition voltage light-emitting devices transport temperature diodes
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Dept of Physics
Depositing User: miss munirah saadom
Date Deposited: 16 Jul 2013 08:44
Last Modified: 26 Dec 2014 14:15
URI: http://eprints.um.edu.my/id/eprint/7361

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