Formation of nano-crystalline phase in hydrogenated amorphous silicon thin film by plasma focus ion beam irradiation

Ngoi, S.K. and Yap, S.L. and Goh, B.T. and Ritikos, R. and Rahman, S.A. and Wong, C.S. (2012) Formation of nano-crystalline phase in hydrogenated amorphous silicon thin film by plasma focus ion beam irradiation. Journal of Fusion Energy, 31 (1). pp. 96-103. ISSN 0164-0313

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Abstract

A 3.3 kJ Mather type dense plasma focus device is used to generate a pulsed argon ion beam of 100 KeV in this work. Hydrogenated amorphous silicon (a-Si:H) film prepared by plasma enhanced chemical vapor deposition (PECVD) on c-Si substrate was irradiated with the argon ion beam produced by this dense plasma focus device. The effects of exposure to a single, 5 and 10 shots of dense plasma focus argon ion beam irradiation on the surface morphology, crystallinity and chemical bonding properties of the a-Si:H films were studied using Field Emission Scanning Electron Microscope (FESEM), X-ray Diffraction (XRD), Raman scattering and Fourier Transform Infrared (FTIR) spectroscopy, respectively. Formation of nano-crystalline silicon phase along with increase in structural order and hydrogen content in the film structure has been observed when the a-Si:H film was irradiated with a single shot of dense plasma focus argon ion beam. Exposure to 5 and 10 shots of the dense plasma focus argon ion beam irradiation reduced the hydrogen content resulting in a decrease in crystallinity and structural order in the film structure.

Item Type: Article
Uncontrolled Keywords: Hydrogenated amorphous silicon Silicon nano-crystallites Dense plasma focus Ion beam x-ray-emission neutron emission device deposition implantation
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Dept of Physics
Depositing User: miss munirah saadom
Date Deposited: 15 Jul 2013 07:31
Last Modified: 11 Dec 2014 08:00
URI: http://eprints.um.edu.my/id/eprint/7354

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