Sameera, Jannatun Noor and Islam, Mohammad Aminul and Islam, Saiful and Hossain, Tasnia and Sobayel, M. K. and Akhtaruzzaman, Md and Amin, Nowshad and Rashid, Mohammad Junaebur (2022) Cubic Silicon Carbide (3C-SiC) as a buffer layer for high efficiency and highly stable CdTe solar cell. Optical Materials, 123. ISSN 0925-3467, DOI https://doi.org/10.1016/j.optmat.2021.111911.
Full text not available from this repository.Abstract
Cubic Silicon Carbide (3C-SiC) is a potential material for use in photovoltaics for its significant advancement in growth in terms of crystal quality and domain size. Hence, 3C-SiC has been introduced here as an alternative non-toxic buffer layer for heterojunction CdTe solar cell. The solar cell is designed for the study consisted of multi-junction semiconductor layers such as p-CdTe/n-3C-SiC/n-SnO2. Device modeling of the novel CdTe solar cell including the thickness and doping concentration of the novel buffer layer 3C-SiC are investigated and optimized using SCAPS-1D software. Also, the defect density in the buffer layer is studied to see the tolerance of the proposed device structure. The working temperature and incident light intensity are also varied to deduce the effect of environmental conditions on efficient PV operation.
| Item Type: | Article |
|---|---|
| Funders: | Centennial Research Grant, University of Dhaka |
| Uncontrolled Keywords: | CdTe; 3C-SiC; Potential buffer layer; High stability; Light intensity |
| Subjects: | Q Science > QC Physics T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Faculty of Engineering > Department of Electrical Engineering |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 28 Jul 2022 01:27 |
| Last Modified: | 28 Jul 2022 01:27 |
| URI: | http://eprints.um.edu.my/id/eprint/33620 |
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