Samsudin, Muhammad Esmed Alif and Yusuf, Yusnizam and Zainal, Norzaini and Abu Bakar, Ahmad Shuhaimi and Zollner, Christian and Iza, Michael and DenBaars, Steven P. (2021) Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED. Microelectronics International, 38 (3, SI). pp. 113-118. ISSN 1356-5362, DOI https://doi.org/10.1108/MI-02-2021-0012.
Full text not available from this repository.Abstract
Purpose The purpose of this study is to investigate the influence of AlN nucleation thickness in reducing the threading dislocations density in AlN layer grown on sapphire substrate. Design/methodology/approach In this work, the effect of the nucleation thickness at 5 nm, 10 nm and 20 nm on reducing the dislocation density in the overgrown AlN layer by metal organic chemical vapor deposition was discussed. The AlN layer without the nucleation layer was also included in this study for comparison. Findings By inserting the 10 nm thick nucleation layer, the density of the dislocation in the AlN layer can be as low as 9.0 x 10(8) cm(-2). The surface of the AlN layer with that nucleation layer was smoother than its counterparts. Originality/value This manuscript discussed the influence of nucleation thickness and its possible mechanism in reducing dislocations density in the AlN layer on sapphire. The authors believe that the finding will be of interest to the readers of this journal, in particular those who are working on the area of AlN.
| Item Type: | Article |
|---|---|
| Funders: | Kementerian Pendidikan Malaysia Fundamental Research Grant Scheme (FRGS) [203/CINOR/6711718] |
| Uncontrolled Keywords: | AlN layer; Deep Ultra-Violet (UV) light emitting diode (LED); Epitaxy; Growth mode; Metal-organic chemical vapor deposition (MOCVD); AlN template |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Faculty of Science |
| Depositing User: | Ms Zaharah Ramly |
| Date Deposited: | 06 Apr 2022 07:33 |
| Last Modified: | 12 Apr 2022 04:58 |
| URI: | http://eprints.um.edu.my/id/eprint/28591 |
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