Makinudin, Abdullah Haaziq Ahmad and Omar, Al-Zuhairi and Bakar, Ahmad Shuhaimi Abu and Anuar, Afiq and Supangat, Azzuliani (2021) Disilane doping of semi-polar (11-22) n-GaN: The impact of terrace-like evolution toward the enhancement of the electrical properties. Thin Solid Films, 720. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2020.138489.
Full text not available from this repository.Abstract
Semi-polar (11-22) n-type gallium nitride thin films with various disilane doping levels were deposited via metal-organic chemical vapor deposition. The impact of the dissimilar disilane doping levels on the crystal, morphological, strain, and electrical properties was extensively studied. An X-ray rocking curve analysis demonstrated an improved crystal quality with enhanced terrace-like features using 15 standard cubic centimeters per minute of disilane doping. A closely packed step terrace-like feature was exhibited, reducing the density of arrowhead-like features. This facilitated a smoother surface with a root mean square surface roughness of 5.7 nm. Raman spectroscopy revealed that using an intermediate disilane flux reduced the compressive strain. An electrical analysis also showed that a moderate disilane doping level improved the carrier concentration and mobility to 1.3 x 10(18) cm(-3) and 99.3 cm(-2). V-1. s(-1), respectively.
| Item Type: | Article |
|---|---|
| Funders: | Ministry of Higher Education (MOHE) for the Long-Term Research Grant Scheme (LRGS) (LR001A-2016A), Universiti Malaya UMRG (RP039B-18AFR) |
| Uncontrolled Keywords: | Disilane; Electrical properties; n-Type gallium nitride; Semi-polar; Terrace-like features |
| Subjects: | Q Science > QC Physics T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Faculty of Science |
| Depositing User: | Ms Zaharah Ramly |
| Date Deposited: | 31 Mar 2022 04:12 |
| Last Modified: | 31 Mar 2022 04:12 |
| URI: | http://eprints.um.edu.my/id/eprint/27901 |
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