Wong, Yew Hoong and Lei, Zhen Ce and Abidin, Nor Ishida Zainal (2021) Surface and interface characteristics of annealed ZrO2/Ge oxide-semiconductor structure in argon ambient. Surfaces and Interfaces, 23. ISSN 2468-0230, DOI https://doi.org/10.1016/j.surfin.2021.101007.
Full text not available from this repository.Abstract
ZrO2 thin film of 5 nm has been thermally oxidized from metallic Zr on Ge in oxygen ambient at 500 degrees C for 15 min. The effects of post-oxidation annealing temperature (400 degrees C-800 degrees C) on the surface and interface characteristics of the ZrO2 thin films on Ge semiconductor wafer substrate have been systematically investigated. Chemical and structural properties of the films were characterized by X-ray diffractometer system, X-ray photoelectron spectrometer, Raman spectrometer, and optical microscopy. Metal-oxide-semiconductor capacitors have been constructed to test the leakage current through the oxide film by current-voltage measurements. The optimal annealing temperature for ZrO2/Ge structure is reported to be at 600 degrees C. With the analysis of the characterized results, the surface and interface characteristics of annealed ZrO2/Ge structure has with a post oxidation annealing mechanism has been suggested.
| Item Type: | Article |
|---|---|
| Funders: | Ministry of Energy, Science, Technology, Environment and Climate Change (MESTECC), Malaysia (03-01-03-SF1083), Universiti Malaya (GPF017A-2018), Southeast Asia - Taiwan Universities (SATU) Joint Research Scheme (ST016-2020) |
| Uncontrolled Keywords: | Interface; Thin film; Oxide; Argon; Annealing |
| Subjects: | Q Science > QC Physics Q Science > QD Chemistry T Technology > TA Engineering (General). Civil engineering (General) T Technology > TP Chemical technology |
| Divisions: | Faculty of Engineering > Department of Mechanical Engineering |
| Depositing User: | Ms Zaharah Ramly |
| Date Deposited: | 14 May 2022 01:37 |
| Last Modified: | 14 May 2022 01:37 |
| URI: | http://eprints.um.edu.my/id/eprint/26973 |
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