Wong, Y.H. and Cheong, K.Y. (2013) Electrical study of ZrO2/Si system formed at different oxidation/nitridation temperatures for extended duration in N2O ambient. Journal of Materials Research, 28 (21). pp. 2985-2989. ISSN 0884-2914, DOI https://doi.org/10.1557/jmr.2013.281.
Full text not available from this repository.Abstract
Electrical properties of ZrO2 formed by simultaneous oxidation and nitridation of sputtered Zr thin films on Si have been systematically investigated. Various oxidation/nitridation temperatures (500, 700, 900, and 1100 °C) have been carried out in N2O ambient for an extended time of 20 min. Results indicated that the sample oxidized and nitrided at 700 °C possessed the highest effective dielectric constant of 18.22 and electrical breakdown field of 10.7 MV/cm at a current density of 10−6 A/cm2. This is attributed to the lowest effective oxide charge, interface-trap density, and total interface-trap density. The Fowler–Nordheim tunneling mechanism has been investigated for all samples and the highest value of barrier height extracted between the conduction band edges of oxide and semiconductor was 1.22 eV.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Oxide; Dielectric; Electrical properties |
| Subjects: | T Technology > TA Engineering (General). Civil engineering (General) |
| Divisions: | Faculty of Engineering |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 11 Mar 2015 03:34 |
| Last Modified: | 11 Mar 2015 03:34 |
| URI: | http://eprints.um.edu.my/id/eprint/13004 |
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