Items where Author is "Sulaiman, Abdullah Fadil"

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Number of items: 5.

Article

Rais, Shamsul Amir Abdul and Hassan, Zainuriah and Abu Bakar, Ahmad Shuhaimi and Abd Rahman, Mohd Nazri and Yusuf, Yusnizam and Taib, Muhamad Ikram Md and Sulaiman, Abdullah Fadil and Hussin, Hayatun Najiha and Ahmad, Mohd Fairus and Norizan, Mohd Natashah and Nagai, Keiji and Akimoto, Yuka and Shoji, Dai (2021) Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes. Optical Materials Express, 11 (3). pp. 926-935. ISSN 2159-3930, DOI https://doi.org/10.1364/OME.413417.

Abd Rahman, Mohd Nazri and Talik, Noor Azrina and Abdul Khudus, Muhammad Imran Mustafa and Sulaiman, Abdullah Fadil and Allif, Kamarul and Zahir, Norhilmi Mohd and Shuhaimi, Ahmad (2019) Ammonia flux tailoring on the quality of AlN epilayers grown by pulsed atomic-layer epitaxy techniques on (0 0 0 1)-oriented sapphire substrates via MOCVD. CrystEngComm, 21 (12). pp. 2009-2017. ISSN 1466-8033, DOI https://doi.org/10.1039/C9CE00014C.

Rahman, Mohd Nazri Abd and Sulaiman, Abdullah Fadil and Abdul Khudus, Muhammad Imran Mustafa and Allif, Kamarul and Talik, Noor Azrina and Basri, Siti Hajar and Shuhaimi, Ahmad (2019) Effects of pulse cycle number on the quality of pulsed atomic-layer epitaxy AlN films grown via metal organic chemical vapor deposition. Japanese Journal of Applied Physics, 58 (SC). SC1037. ISSN 0021-4922, DOI https://doi.org/10.7567/1347-4065/ab09d3.

Khandaker, Mayeen Uddin and Asaduzzaman, Khandoker and Sulaiman, Abdullah Fadil and Bradley, David Andrew and Isinkaye, Matthew Omoniyi (2018) Elevated concentrations of naturally occurring radionuclides in heavy mineral-rich beach sands of Langkawi Island, Malaysia. Marine Pollution Bulletin, 127. pp. 654-663. ISSN 0025-326X, DOI https://doi.org/10.1016/j.marpolbul.2017.12.055.

Abd Rahman, Mohd Nazri and Shuhaimi, Ahmad and Yusuf, Yusnizam and Li, Hongjian and Sulaiman, Abdullah Fadil and Alif Samsudin, Muhammad Esmed and Zainal, Norzaini and Abdul Khudus, Muhammad Imran Mustafa (2018) Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD. Superlattices and Microstructures, 120. pp. 319-326. ISSN 0749-6036, DOI https://doi.org/10.1016/j.spmi.2018.05.024.

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