Photoconductivity in pulsed PECVD hydrogenated amorphous silicon thin films

Tong, Goh Boon and Han, Shi Chee and Richard, Ritikos and Rasat, Muhamat Muhamad and Abdul, Rahman Saadah (2006) Photoconductivity in pulsed PECVD hydrogenated amorphous silicon thin films. Jurnal Fizik Malaysia, 27 (3 & 4). pp. 121-123. ISSN 0128-0333,

Full text not available from this repository.


Hydrogenated Amorphous Silicon (a-Si:H) thin films were deposited using a pulsed plasma enhanced chemical vapor deposition (PECVD) system developed in our laboratory. The pulsed discharge has been shown to allow deposition at higher power without deteriorating the film properties. In this work, we report our work on the photoconductivity studies done on this pulsed PECVD a-Si:H films. Photoconductivity in these films showed strong dependence on the discharge power and silane flow-rate. Optical parameters obtained from the optical transmission spectra in the ultra-violet visible region of these films were analyzed together with the photoconductivity results. This analysis was used to explain the effects of discharge power on the photoconductivity of the pulsed PECVD a-SiH thin film.

Item Type: Article
Uncontrolled Keywords: enhanced chemical vapor deposition; PECVD; Hydrogenated Amorphous Silicon
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Department of Physics
Depositing User: miss munirah saadom
Date Deposited: 16 Jul 2013 01:06
Last Modified: 16 Jul 2013 01:06

Actions (login required)

View Item View Item