Optical properties of annealed Si:H thin film prepared by layer-by-layer (LBL) deposition technique

Goh, Boon Tong and Muhamad, Muhamad Rasat and Rahman, Saadah Abdul (2010) Optical properties of annealed Si:H thin film prepared by layer-by-layer (LBL) deposition technique. Physica B: Condensed Matter, 405 (23). pp. 4838-4844. ISSN 0921-4526, DOI https://doi.org/10.1016/j.physb.2010.09.015.

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Official URL: https://doi.org/10.1016/j.physb.2010.09.015


Optical studies were performed on annealed hydrogenated silicon (Si:H) thin films deposited by plasma-enhanced chemical vapor deposition (PECVD) using the layer-by-layer (LBL) deposition technique. The films were annealed for 1 h at temperatures of 400, 600, 800 and 1000 degrees C in ambient nitrogen. The effects of annealing temperatures on the optical properties, such as the optical-energy gap, Urbach energy, refractive index, dispersion energy and single oscillator strength, were studied. These parameters were determined from optical transmission and reflection spectroscopy. X-ray diffraction (XRD) and optical reflectance measurements were performed on the samples, showing the onset of transformation from an amorphous to a crystalline phase in the film structure when annealed at a temperature of 800 degrees C. The films were of mixed phase, with nanocrystalline grains embedded in the amorphous matrix. (C) 2010 Elsevier B.V. All rights reserved.

Item Type: Article
Uncontrolled Keywords: Hydrogenated silicon; Annealing; Transmittance and reflectance; Crystallinity
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Department of Physics
Depositing User: miss munirah saadom
Date Deposited: 16 Jul 2013 01:07
Last Modified: 27 Aug 2019 00:54
URI: http://eprints.um.edu.my/id/eprint/7369

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