Novel, gain-flattened L-band EDFA with ASE utilization with > 40 nm 3 dB bandwidth

Adikan, Faisal Rafiq Mahamd and Mahdi, M.A. and Thirumeni, S. and Poopalan, Prabakaran and Dimyati, Kaharudin and Ahmad, Harith (2001) Novel, gain-flattened L-band EDFA with ASE utilization with > 40 nm 3 dB bandwidth. Microwave and Optical Technology Letters, 28 (6). pp. 399-402. ISSN 0895-2477,

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A simple gain-flattened L-band erbium-doped fiber amplifier (EDFA) is demonstrated, utilizing unwanted C-band amplified spontaneous emission (ASE) to enhance L-bulld gain performance. An L-band flat gain range of 50 nm (1560-1610 nm) is achieved for use in wavelength-division multiplexing (WDM) transmission systems. Gain flatness with a 3 dB gain discrepancy is obtained through manipulation of the pump power. (C) 2001 John Wiley & Sons, Inc.

Item Type: Article
Additional Information: Adikan, FRM Mahdi, MA Thirumeni, S Poopalan, P Dimyati, K Ahmad, H
Uncontrolled Keywords: Gain-flattened long band erbium-doped fiber amplifier optical amplifier doped fiber amplifiers broad-band wide-band
Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
Divisions: Faculty of Engineering
Depositing User: Mr. Mohammed Salim Abd Rahman
Date Deposited: 07 Feb 2013 01:28
Last Modified: 17 Oct 2018 08:47

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