Physical and electrical characteristics of Ho2O3 thin film based on 4H-SiC wide bandgap semiconductor

Odesanya, Kazeem Olabisi and Onik, Tahsin Ahmed Mozaffor and Ahmad, Roslina and Andriyana, Andri and Ramesh, S. and Tan, Chou Yong and Wong, Yew Hoong (2022) Physical and electrical characteristics of Ho2O3 thin film based on 4H-SiC wide bandgap semiconductor. Thin Solid Films, 741. ISSN 0040-6090, DOI

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The continuous down-sizing of metal oxide semiconductor field effect transistors have been confronted with various challenges in the last few decades, ranging from aggressive reduction of channel to miniaturization of dielectric gate thickness. In a bid to proffer solution to these challenges, a high-kappa dielectric and metal gate technology was proposed to substitute the conventional silicon dioxide gate layers. Therefore, this study focused on the formation of Ho2O3 thin film on a SiC substrate by sputtering and thermal oxidation. The effects of thermal oxidation on the structural, chemical, and electrical properties of the resulting Ho2O3 layers were evaluated experimentally at various temperatures from 800 - 1100 degrees C. The crystallinity of the Ho2O3 films were detected by x-ray diffraction, W-H plot, crystallites size, micro-strain, high resolution transmission electron microscopy. The result of electrical characterization shows that thermally oxidized samples at 900 degrees C have the optimum electrical properties, which could be attributed to the thinnest oxide and absence of interfacial layer that was recorded at that temperature.

Item Type: Article
Funders: Ministry of Higher Education (MOHE) Malaysia [Grant No: FP049-2020], Universiti Malaya (UM) [Grant No: FG008-17AFR], Universiti Malaya (UM) via Southeast Asia - Taiwan Universities (SATU) Joint Research Scheme [Grant No: ST016-2020]
Uncontrolled Keywords: Holmium oxide; Wide bandgap semiconductor; Electrical properties; Silicon carbide
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Divisions: Faculty of Engineering > Department of Mechanical Engineering
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 20 Jul 2022 02:46
Last Modified: 20 Jul 2022 02:46

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