Wong, Yew Hoong and Lei, Zhen Ce and Abidin, Nor Ishida Zainal (2021) Surface and interface characteristics of annealed ZrO2/Ge oxide-semiconductor structure in argon ambient. Surfaces and Interfaces, 23. p. 101007. ISSN 2468-0230, DOI https://doi.org/10.1016/j.surfin.2021.101007.
Full text not available from this repository.Abstract
ZrO2 thin film of 5 nm has been thermally oxidized from metallic Zr on Ge in oxygen ambient at 500°C for 15 min. The effects of post-oxidation annealing temperature (400°C–800°C) on the surface and interface characteristics of the ZrO2 thin films on Ge semiconductor wafer substrate have been systematically investigated. Chemical and structural properties of the films were characterized by X-ray diffractometer system, X-ray photoelectron spectrometer, Raman spectrometer, and optical microscopy. Metal-oxide-semiconductor capacitors have been constructed to test the leakage current through the oxide film by current–voltage measurements. The optimal annealing temperature for ZrO2/Ge structure is reported to be at 600°C. With the analysis of the characterized results, the surface and interface characteristics of annealed ZrO2/Ge structure has with a post oxidation annealing mechanism has been suggested. © 2021 Elsevier B.V.
| Item Type: | Article |
|---|---|
| Funders: | Ministry of Science, Technology and Innovation (MOSTI), Malaysia via ScienceFund (03-01-03-SF1083), University of Malaya via Faculty Research Grant (GPF017A-2018), Southeast Asia – Taiwan Universities (SATU) Joint Research Scheme (ST016-2020) |
| Uncontrolled Keywords: | interface; thin film; oxide; argon; annealing |
| Subjects: | T Technology > TJ Mechanical engineering and machinery |
| Divisions: | Faculty of Engineering |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 03 May 2021 06:44 |
| Last Modified: | 03 May 2021 06:44 |
| URI: | http://eprints.um.edu.my/id/eprint/25926 |
Actions (login required)
 |
View Item |
