Tailoring electronics structure, electrical and magnetic properties of synthesized transition metal (Ni)-doped ZnO thin film

Basri, Siti Hajar and Abd Majid, Wan Haliza and Talik, Noor Azrina and Sarjidan, Mohd Arif Mohd (2018) Tailoring electronics structure, electrical and magnetic properties of synthesized transition metal (Ni)-doped ZnO thin film. Journal of Alloys and Compounds, 769. pp. 640-648. ISSN 0925-8388, DOI https://doi.org/10.1016/j.jallcom.2018.08.056.

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Official URL: https://doi.org/10.1016/j.jallcom.2018.08.056


Improving Zinc Oxide (ZnO) conductivity is in dire need due to its major shortcoming of high resistivity as a result of low carrier concentration. In this work, ZnO was doped with a transition metal, Nickel (Ni) in different concentrations (1 mol%, 2 mol%, 3 mol%, and 4 mol%) and the influence of Ni concentrations in ZnO thin film in term of electrical, electronic structure as well as magnetic properties were investigated. ZnO thin films with Ni-doping were successfully produced via a sol-gel spin coating method. High-Resolution Transmission Electron Microscopy (HR-TEM) image observed for 3 mol% Ni:ZnO thin film shows clear and coherent lattice fringes in hexagonal shape with the amorphous structure inside. The resistivity of Ni:ZnO films show to decrease with the addition of Ni-doping down to 1.7 × 10−1 Ω cm, whilst the conductivity and the carrier concentration improved from 0.28 Sm-1 to 5.87 Sm-1 and 2.23 × 1014 cm−3 to 485.14 × 1014 cm−3 respectively. Thermal dependence activation energy (Ea) of ZnO thin film is found to be 1.3 eV and increases up to 15.1 eV above 373 K. X-ray Photoemission Spectroscopy/Ultraviolet Photoemission Spectroscopy (XPS/UPS) spectra indicate that Ni-doped ZnO induced more surface defects and native defects in the ZnO system. In addition to that, photoluminescence spectra show that Vo and Zni induced shallow donor in the system. Finally, via Vibrating Sample Magnetometery (VSM) measurement, it is revealed that the ferromagnetism of Ni:ZnO might be induced by the co-existence of Vo and Zni defects. These results may open an attractive path to tailor Ni-doping in ZnO system to act as potential candidates for the optoelectronic and spintronic applications.

Item Type: Article
Funders: LR001A-2016A ( LRGS ) grant, RP038D-17AFR ( UMRG ) grant
Uncontrolled Keywords: Zinc oxide; Oxide materials; Sol-gel processes; Magnetization; Electronic properties
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Divisions: Faculty of Science > Department of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 13 Sep 2019 06:24
Last Modified: 13 Sep 2019 06:24
URI: http://eprints.um.edu.my/id/eprint/22337

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