Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire

Omar, Al-Zuhairi and Shuhaimi, Ahmad and Makinudin, Abdullah Haaziq Ahmad and Abdul Khudus, Muhammad Imran Mustafa and Supangat, Azzuliani (2018) Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire. Materials Science in Semiconductor Processing, 86. pp. 1-7. ISSN 1369-8001, DOI https://doi.org/10.1016/j.mssp.2018.06.014.

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Official URL: https://doi.org/10.1016/j.mssp.2018.06.014


We demonstrate high quality semi-polar (11-22) gallium nitride thin film grown on m-plane sapphire substrate with the insertion of AlN/GaN multi-layer via MOCVD. The influence of three different number of multi-layers AlN/GaN pairs on the crystal quality and surface morphology of semi-polar (11-22) gallium nitride thin film is investigated. The surface morphology analysis strongly suggests that increasing the number of AlN/GaN pairs from 20 to 60 suppresses the arrowhead-like and undulated features. The increase of AlN/GaN pairs also enhanced the surface quality, with the root mean square roughness improving from 16.24 nm to 6.08 nm. The abruptness of the interface between the AlN/GaN pairs was seen to improve significantly upon reaching the 40th pair where a continuous thin layer was clearly observed for each pair. The crystal quality was also observed to be enhanced at higher number of AlN/GaN pairs, where the on- and off-axis X-ray rocking curve showed significant reduction in the full width at half maximum of at least ~10% and 20%. Finally, x-ray reciprocal space mapping analysis further confirms the enhancement of the crystal quality as the diffuse scattering streak was suppressed, which may indicate a significant reduction of the defect density.

Item Type: Article
Funders: University Malaya for UMRG : RP039B-18AFR , RP039A-18AFR & RG368-15AFR and FRGS : FP046-2015A, CREST Gallium Nitride on Gallium Nitride Collaboration (PVD15-2015), Ministry of Higher Education (MOHE) for the Long-Term Research Grant ( LRGS ) account/project No: LR001A-2016A for project funding
Uncontrolled Keywords: Gallium nitride; Multi-layer; Semi-polar; Surface morphology; Thin film
Subjects: Q Science > Q Science (General)
Q Science > QC Physics
Divisions: Faculty of Science > Department of Physics
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 25 Apr 2019 04:58
Last Modified: 25 Apr 2019 04:58
URI: http://eprints.um.edu.my/id/eprint/21078

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