Comparison of oxidized/nitrided Zr thin films on Si and SiC substrates

Wong, Y.H. and Cheong, K.Y. (2013) Comparison of oxidized/nitrided Zr thin films on Si and SiC substrates. Ceramics International, 39 (Spp. 1). S475-S479. ISSN 0272-8842, DOI

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This work utilizes simultaneous thermal oxidation and nitridation technique to transform sputtered Zr to ZrO2 and to Zr-oxynitride thin films on Si and SiC substrates, respectively, in nitrous oxide gas ambient. Various characterization techniques such as X-ray photoelectron spectroscopy, energy-filtered transmission electron spectroscopy, atomic force microscopy, X-ray diffraction, capacitance–voltage measurements, and leakage current density-electric field measurements were carried out to evaluate and compare the structural, chemical, and electrical properties of the films produced on both Si and SiC substrates.

Item Type: Article
Uncontrolled Keywords: Thin film; Oxide; D. Nitride
Subjects: T Technology > TA Engineering (General). Civil engineering (General)
Divisions: Faculty of Engineering
Depositing User: Ms. Juhaida Abd Rahim
Date Deposited: 11 Mar 2015 04:05
Last Modified: 11 Mar 2015 04:05

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