 | Up a level |
Mansor, Mazwan and Syamsul, M. and Yusuf, Yusnizam and Rahman, Mohd Nazri Abdul (2023) Atomic structure for AlN grown on different plane orientation of sapphire via numerical study. Microelectronics International, 40 (1, SI). pp. 46-52. ISSN 1356-5362, DOI https://doi.org/10.1108/MI-04-2022-0065.
Samsudin, Muhammad Esmed Alif and Yusuf, Yusnizam and Zainal, Norzaini and Abu Bakar, Ahmad Shuhaimi and Zollner, Christian and Iza, Michael and DenBaars, Steven P. (2021) Effect of nucleation layer thickness on reducing dislocation density in AlN layer for AlGaN-based UVC LED. Microelectronics International, 38 (3, SI). pp. 113-118. ISSN 1356-5362, DOI https://doi.org/10.1108/MI-02-2021-0012.
Rais, Shamsul Amir Abdul and Hassan, Zainuriah and Abu Bakar, Ahmad Shuhaimi and Abd Rahman, Mohd Nazri and Yusuf, Yusnizam and Taib, Muhamad Ikram Md and Sulaiman, Abdullah Fadil and Hussin, Hayatun Najiha and Ahmad, Mohd Fairus and Norizan, Mohd Natashah and Nagai, Keiji and Akimoto, Yuka and Shoji, Dai (2021) Effect of indium pre-flow on wavelength shift and crystal structure of deep green light emitting diodes. Optical Materials Express, 11 (3). pp. 926-935. ISSN 2159-3930, DOI https://doi.org/10.1364/OME.413417.
Abd Rahman, Mohd Nazri and Shuhaimi, Ahmad and Yusuf, Yusnizam and Li, Hongjian and Sulaiman, Abdullah Fadil and Alif Samsudin, Muhammad Esmed and Zainal, Norzaini and Abdul Khudus, Muhammad Imran Mustafa (2018) Standard pressure deposition of crack-free AlN buffer layer grown on c-plane sapphire by PALE technique via MOCVD. Superlattices and Microstructures, 120. pp. 319-326. ISSN 0749-6036, DOI https://doi.org/10.1016/j.spmi.2018.05.024.
