Abdullah, Saifollah and Rusop, Mohamad and Muhamad, Muhamad Rasat (2006) A novel nanoporous silicon prepared using electrochemical deposition technique for light emitting diode applications. Surface Review and Letters, 13 (05). pp. 573-576. ISSN 0218-625X, DOI https://doi.org/10.1142/S0218625X06008517.
Full text not available from this repository.Abstract
The electroluminescence (EL) studies on the aluminum-doped nanoporous silicon (NPSi:Al) have been conducted. Nanoporous silicon (NPSi) layers have been prepared by anodically etching the unpolished p-type Si[100] wafer with surface resistivity of 4-8 Ωcm-1 in hydrofluoric solution at 1:1 ratio of ethanol. Aluminum (Al) was doped on NPSi using cathodic electrodeposition composed of aluminum chloride (AlCl3) and ethanol electrolyte. A diode structure has been fabricated comprising a semi-transparent Au/NPSi:Al/p-Si/Al ohmic contact electrode showing rectification on a forward bias I-V curve. EL from NPSi and NPSi:Al/p-Si has also been observed using the diode structure. The NPSi:Al/p-Si device shows increasing EL quantum efficiency at about 30%, and blue-shift EL spectra are observed. Possible reasons for the enhancement will be discussed. © World Scientific Publishing Company.
| Item Type: | Article |
|---|---|
| Funders: | IRPA under the R&D Grant 09-02-03-1038, Universiti Teknologi Mara (UiTM) |
| Uncontrolled Keywords: | Doping process; Electroluminescence; Luminescence; Nanostructure; Porous silicon; Quantum efficiency |
| Subjects: | Q Science > Q Science (General) Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | Ms. Juhaida Abd Rahim |
| Date Deposited: | 29 May 2020 04:08 |
| Last Modified: | 29 May 2020 04:08 |
| URI: | http://eprints.um.edu.my/id/eprint/24481 |
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