Synthesis of β-Silicon carbide nanowires by a simple, catalyst-free carbo-thermal evaporation technique

Al-Ruqeishi, M.S. and Nor, R.M. and Amin, Y.M. and Al-Azri, K. (2012) Synthesis of β-Silicon carbide nanowires by a simple, catalyst-free carbo-thermal evaporation technique. Jurnal Teknologi (Sciences and Engineering), 59 (SUPPL.). pp. 75-78. ISSN 01279696

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Abstract

β-SiC nanowires were successfully fabricated on pare Si (100) substrate using simple carbo-thermal evaporation of graphite at 1200°C. The obtained β-SiC nanowires were aligned with diameters ranged between 40 to 500 nm. The majority of crystal planes were β-SiC (111) with other less intensity of (200), (220) and (311). The silicon substrate location inside the furnace found to be critical in the formation of the β-SiC nanowires. Also, FTIR absorption peaks for β-SiC nanowires found at higher frequency side of 1110 cm-1 which is pointed to Si-O asymmetric stretching mode. © 2012 Penerbit UTM Press. All rights reserved.

Item Type: Article
Uncontrolled Keywords: β-SiC nanowires; Carbo-thermal evaporation
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Dept of Physics
Depositing User: miss munirah saadom
Date Deposited: 09 Jul 2013 09:34
Last Modified: 17 Jan 2019 06:09
URI: http://eprints.um.edu.my/id/eprint/7890

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