Optical characteristics of hydrogenated amorphous silicon carbide films prepared at various gas flow rate ratios

Azis, A. and Rahman, Saadah Abdul (2007) Optical characteristics of hydrogenated amorphous silicon carbide films prepared at various gas flow rate ratios. Japanese Journal of Applied Physics, 46 (10A). pp. 6530-6532. ISSN 0021-4922, DOI https://doi.org/10.1143/jjap.46.6530.

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Abstract

Hydrogenated amorphous silicon carbide (a-SiC:H) films were prepared using a home-built plasma-enhanced chemical vapor deposition (PECVD) system with different flow rate ratios of methane (CH(4)) and silane (SiH(4)) gases. Fourier-transform infrared (FTIR) spectra indicate multiple bonding configurations consisting of wagging, bending and stretching modes of silicon, hydrogen and carbon atoms with a steady depletion of Si-H wagging and stretching modes as the gas flow rate ratio increases. Micro-Raman spectra show evidence of amorphous silicon structure in all the films. Only the a-SiC:H film prepared at the highest CH(4) to SiH(4) gas flow rate ratio shows the existence of the Si-C vibrational mode. All the samples prepared show room-temperature luminescence with two peaks centered at 467 and 698 nm. The photoluminescence (PL) intensity increases as the CH(4) to SiH(4) gas flow rate ratio increases but a reduction in intensity is observed for a high CH(4) to SiH(4) gas flow rate ratio. a-SiC:H films with higher optical energy gaps were obtained by allowing the gases to flow at higher CH(4) to SiH(4) gas flow rate ratios.

Item Type: Article
Funders: UNSPECIFIED
Uncontrolled Keywords: hydrogenated amorphous silicon carbide photoluminescence PECVD chemical-vapor-deposition temperature deposition thin-films growth hwcvd
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Department of Physics
Depositing User: miss munirah saadom
Date Deposited: 16 Jul 2013 01:08
Last Modified: 21 Mar 2019 04:39
URI: http://eprints.um.edu.my/id/eprint/7366

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