Azis, A. and Rahman, Saadah Abdul (2007) Optical characteristics of hydrogenated amorphous silicon carbide films prepared at various gas flow rate ratios. Japanese Journal of Applied Physics, 46 (10A). pp. 6530-6532. ISSN 0021-4922, DOI https://doi.org/10.1143/jjap.46.6530.
Full text not available from this repository.Abstract
Hydrogenated amorphous silicon carbide (a-SiC:H) films were prepared using a home-built plasma-enhanced chemical vapor deposition (PECVD) system with different flow rate ratios of methane (CH(4)) and silane (SiH(4)) gases. Fourier-transform infrared (FTIR) spectra indicate multiple bonding configurations consisting of wagging, bending and stretching modes of silicon, hydrogen and carbon atoms with a steady depletion of Si-H wagging and stretching modes as the gas flow rate ratio increases. Micro-Raman spectra show evidence of amorphous silicon structure in all the films. Only the a-SiC:H film prepared at the highest CH(4) to SiH(4) gas flow rate ratio shows the existence of the Si-C vibrational mode. All the samples prepared show room-temperature luminescence with two peaks centered at 467 and 698 nm. The photoluminescence (PL) intensity increases as the CH(4) to SiH(4) gas flow rate ratio increases but a reduction in intensity is observed for a high CH(4) to SiH(4) gas flow rate ratio. a-SiC:H films with higher optical energy gaps were obtained by allowing the gases to flow at higher CH(4) to SiH(4) gas flow rate ratios.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | hydrogenated amorphous silicon carbide photoluminescence PECVD chemical-vapor-deposition temperature deposition thin-films growth hwcvd |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | miss munirah saadom |
| Date Deposited: | 16 Jul 2013 01:08 |
| Last Modified: | 21 Mar 2019 04:39 |
| URI: | http://eprints.um.edu.my/id/eprint/7366 |
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