Infrared and raman spectroscopy studies on pulsed PECVD a-Si:H Films

Boon, T.G. and Rahman, A.S. (2007) Infrared and raman spectroscopy studies on pulsed PECVD a-Si:H Films. Solid State Science and Technology, 15 (2). pp. 153-160. ISSN 0128-7389,

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Abstract

This work presents a study on the structural properties of hydrogenated amorphous silicon (a-Si:H) prepared by pulsed plasma enhanced chemical vapour deposition (PECVD) technique using Raman and infrared spectroscopy. The bonded hydrogen content and hydrogen bonding configurations in the a-Si:H film s were investigated from the Fourier transform infrared (FTIR) spectra of the film s. The Raman spectra of the films have been used to obtain evidence of nanocrystallinity in the films. The dependence of silane flow-rates and discharge power on these properties was investigated. Increase in the discharge power resulted in films with lower hydrogen content and increase the dihydride bond concentration. Nanocrystallinity was observed in films prepared at low discharge power at all silane flow-rates but increase in discharge power resulted in films with purely amorphous structure.

Item Type: Article
Funders: UNSPECIFIED
Uncontrolled Keywords: PECVD, hydrogenated amorphous silicon (a-Si:H)
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Department of Physics
Depositing User: miss munirah saadom
Date Deposited: 16 Jul 2013 00:44
Last Modified: 23 Sep 2013 01:20
URI: http://eprints.um.edu.my/id/eprint/7362

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