Tong, G.B. and Gani, S.M.A. and Muhamad, M.R. and Rahman, S.A. (2009) Influence of bias voltage on the optical and structural properties of nc-Si:H films grown by layer-by-layer (LBL) deposition technique. Thin Solid Films, 517 (17). pp. 4945-4949. ISSN 0040-6090, DOI https://doi.org/10.1016/j.tsf.2009.03.066.
Full text not available from this repository.Abstract
The effects of applying a positive bias of 25 to 100 V on the optical, structural and photoluminescence (PL) properties of hydrogenated nanocrystalline silicon (nc-Si:H) films produced by layer-by-layer (LBL) deposition technique has been studied. Optical characterization of the films has been obtained from UV-VIS-NIR spectroscopy measurements. Structural characterization has been performed using X-ray diffraction, micro-Raman spectroscopy and field emission scanning electron microscope (FESEM). PL spectroscopy technique has been used to investigate the PL properties of the films. In general, the films formed shows a mixed phase of silicon (Si) nanocrystallites embedded within an amorphous phase of the Si matrix. The crystalline volume fraction and grain size of the Si nanocrystallites have been shown to be strongly dependent on the applied bias voltage. High applied bias voltage enhances the growth rate of the films but reduces the refractive index and the optical energy gap of the films. Higher crystalline volume fraction of the films prepared at low bias voltages exhibits room temperature PL at around 1.8 eV (700 nm). (c) 2009 Elsevier B.V. All rights reserved.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Layer-by-layer Deposition rate XRD Micro-Raman PL FESEM chemical-vapor-deposition silicon thin-films hydrogen |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | miss munirah saadom |
| Date Deposited: | 15 Jul 2013 08:05 |
| Last Modified: | 26 Dec 2014 01:01 |
| URI: | http://eprints.um.edu.my/id/eprint/7360 |
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