Helium diluted hydrogenated amorphous silicon prepared by layer-by-layer deposition technique

Kamal, Harmoza and Abdul, Rahman Saadah (2005) Helium diluted hydrogenated amorphous silicon prepared by layer-by-layer deposition technique. Jurnal Fizik Malaysia, 26 (1). pp. 31-35. ISSN 0128-0333

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Abstract

Hydrogenated amorphous silicon (a-Si:H) thin films were prepared by d.c. PECVD technique from the discharge of helium diluted silane. The layer-by-layer (LBL) deposition technique was utilized whereby the growing surface of the films were treated with helium or argon discharge after each sub-layer deposition. Two sets of films were prepared consisting of films deposited with sub-layer deposition times of 10 minutes and 30 seconds. For each set, the helium or argon discharge treatment was varied from 10 to 50 seconds. The total deposition time was one hour for all samples, resulting in 6 and 120 deposition cycles for the films deposited with sub-layer deposition times of 10 minutes and 30 seconds respectively. The effects of helium or argon discharge treatment time on the optical and silicon-hydrogen bonding properties of the films were studied and compared using optical transmission and Fourier transform infrared spectroscopy techniques. The results showed interesting behavioral trends on the effects of helium and argon time on these properties.

Item Type: Article
Uncontrolled Keywords: Hydrogenated amorphous silicon thin films
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Dept of Physics
Depositing User: miss munirah saadom
Date Deposited: 15 Jul 2013 08:06
Last Modified: 15 Jul 2013 08:06
URI: http://eprints.um.edu.my/id/eprint/7358

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