Effects of thermal annealing on the properties of highly reflective Nc-Si: H/A-Cnx: H multilayer films prepared by rf PECVD technique

Rashid, N.M.A. and Ritikos, R. and Goh, B.T. and Gani, S.M.A. and Muhamad, M.R. and Rahman, S.A. (2011) Effects of thermal annealing on the properties of highly reflective Nc-Si: H/A-Cnx: H multilayer films prepared by rf PECVD technique. Solid State Science and Technology, 19 (1). pp. 132-137. ISSN 0128-7389

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Abstract

The effects of thermal annealing in the range of 100-700°C on highly reflecting multilayer thin film consisting of 7 periods of alternating nc-Si:H/a-CNx:H layers prepared by radio-frequency plasma enhanced chemical vapour (r.f. PECVD) deposition technique were investigated. The films were deposited on quartz and <111> p-type c-Si substrate and were studied using ultra-violet-visible-near infrared (UV-VisNIR) and Fourier transform infrared (FTIR) spectroscopy. The as-deposited multilayered films show high reflectivity and wide stop band width at a wavelength of approximately 650 ± 60 nm and the value starts to reduce as the annealing temperature, TA increase. Its FTIR spectra showed the formation of Si-H and Si-H2 bonds in the ncSi:H layer and C=C, C=N, C�N, C-H and N-H bonds in a-CNx:H layer. The films remain thermally stable up to the TA of 400°C and then begin to degrade above this temperature. The results shows that both a-CNx:H and nc-Si:H were affected by heat treatment.

Item Type: Article
Uncontrolled Keywords: hydrogenated nanocrystalline silicon; thin film; reflectivity
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Dept of Physics
Depositing User: miss munirah saadom
Date Deposited: 15 Jul 2013 08:07
Last Modified: 26 Dec 2014 01:02
URI: http://eprints.um.edu.my/id/eprint/7357

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