Effects of annealing on the electro-optical properties of a-Si:H thin films deposited by D.C. and pulsed PECVD

Seck, Chai Lim and Boon, Tong Goh and Abdul, Rahman Saadah (2004) Effects of annealing on the electro-optical properties of a-Si:H thin films deposited by D.C. and pulsed PECVD. Solid State Science and Technology, 12 (1). pp. 59-64.

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Abstract

Hydrogenated amorphous silicon thin films studied in this work were prepared by d.c. and pulsed PECVD technique at a fixe d silane flow-rates of 10 sc cm and 40 sccm. The deposition temperature, pressure and power were fixed at 200 degree Celsius, 0.45 mbar and 1.4 W respectively. The pulsed PECVD system was developed from a modification of the existing d.c. PECVD system with a modulation frequency of 10 kHz. The ON-time and OFF-time was set at 30 seconds. In this work, the effects of anneal ing on the electro-optical properties of films prepared by both techniques at these flow-rates were investigated. These films were analyzed using optical absorption spectroscopy technique. The results showed that annealing had significant effects on electro-optical properties of these films at annealing temperatures above 300 degree Celsius mainly due the evolution of hydrogen. The silane flow-rate and the deposition technique also influenced the effects of annealing on the electro-optical properties of these films.

Item Type: Article
Uncontrolled Keywords: Hydrogenated amorphous silicon; PECVD
Subjects: Q Science > QC Physics
Divisions: Faculty of Science > Dept of Physics
Depositing User: miss munirah saadom
Date Deposited: 15 Jul 2013 06:56
Last Modified: 15 Jul 2013 06:56
URI: http://eprints.um.edu.my/id/eprint/7345

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