Seck, Chai Lim and Boon, Tong Goh and Abdul, Rahman Saadah (2004) Effects of annealing on the electro-optical properties of a-Si:H thin films deposited by D.C. and pulsed PECVD. Solid State Science and Technology, 12 (1). pp. 59-64.
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Effects_of_annealing_on_the_electro-optical_properties_of_a-SiH_thin_films_deposited_by_D.C._and_pulsed_PECVD.pdf - Published Version Download (133kB) |
Abstract
Hydrogenated amorphous silicon thin films studied in this work were prepared by d.c. and pulsed PECVD technique at a fixe d silane flow-rates of 10 sc cm and 40 sccm. The deposition temperature, pressure and power were fixed at 200 degree Celsius, 0.45 mbar and 1.4 W respectively. The pulsed PECVD system was developed from a modification of the existing d.c. PECVD system with a modulation frequency of 10 kHz. The ON-time and OFF-time was set at 30 seconds. In this work, the effects of anneal ing on the electro-optical properties of films prepared by both techniques at these flow-rates were investigated. These films were analyzed using optical absorption spectroscopy technique. The results showed that annealing had significant effects on electro-optical properties of these films at annealing temperatures above 300 degree Celsius mainly due the evolution of hydrogen. The silane flow-rate and the deposition technique also influenced the effects of annealing on the electro-optical properties of these films.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Hydrogenated amorphous silicon; PECVD |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | miss munirah saadom |
| Date Deposited: | 15 Jul 2013 06:56 |
| Last Modified: | 15 Jul 2013 06:56 |
| URI: | http://eprints.um.edu.my/id/eprint/7345 |
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