Chong, S.K. and Goh, B.T. and Aspanut, Z. and Muhamad, M.R. and Dee, C.F. and Rahman, S.A. (2011) Effect of substrate temperature on gold-catalyzed silicon nanostructures growth by hot-wire chemical vapor deposition (HWCVD). Applied Surface Science, 257 (8). pp. 3320-3324. ISSN 0169-4332, DOI https://doi.org/10.1016/j.apsusc.2010.11.012.
Full text not available from this repository.Abstract
The effect of substrate temperature on the structural property of the silicon nanostructures deposited on gold-coated crystal silicon substrate by hot-wire chemical vapor deposition (HWCVD) was studied. The uniformity and size of the as-grown silicon nanostructures is highly influenced by the substrate temperature. XRD, Raman and HRTEM measurements show the silicon nanostructures consist of small crystallites embedded within amorphous matrix. The crystallite size of the as-grown silicon nanostructures decreases with increases in substrate temperature. FTIR shows that these silicon nanostructures are highly disordered for sample prepared at substrate temperature above 250 degrees C. The correlation of crystallinity and structure disorder of the silicon nanostructures growth at different substrate temperature was discussed. (C) 2010 Elsevier B.V. All rights reserved.
| Item Type: | Article |
|---|---|
| Funders: | UNSPECIFIED |
| Uncontrolled Keywords: | Silicon nanostructures HWCVD Crystallinity HRTEM Microstructure parameter metal-induced crystallization amorphous-silicon thin-films cvd method nanowires |
| Subjects: | Q Science > QC Physics |
| Divisions: | Faculty of Science > Department of Physics |
| Depositing User: | miss munirah saadom |
| Date Deposited: | 15 Jul 2013 07:33 |
| Last Modified: | 21 Dec 2014 08:50 |
| URI: | http://eprints.um.edu.my/id/eprint/7339 |
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